Session 12: Oxide TFTs
Paper No S12.2: High-Mobility Indium Oxide Thin-Film Transistors by Means of Plasma-Enhanced Atomic Layer Deposition
Abstract
Indium oxide film has been deposited by plasma-enhanced atomic layer deposition and adopted as channel materials for high-mobility thin-film transistors. The resultant device fabricated at temperature of 200° showed a field-effect mobility of as high as 31 cm2/V s in linear region.
